2014 | 2013 | 2012 | 2011 | 2010 | 2009 | 2008 | 2007 | 2006 | 2005 | 2004 | 2003 | 2002 | 2001 | 2000 | 1999 | 1998 | 1997 | 1996 | 1995 | 1994 | 1993 | 1992 | 1991 | 1990 | 1989 | 1988 | 1987 | 1986 | 1985 | 1984 | 1983 | 1982 | 1981 | 1980 | 1979 | 1978 | 1977 | 1976 | 1975 | 1974 | 1973 | 1972 | 1971 | 1970 | 1969 | 1968 | 1967 | 1966 | 1965 | 1964 | 1963 | 1962 | 1961 | 500 | 76 | 0

Sol-gel derived morphotropic phase boundary 0.37BiScO3-0.63PbTiO3 thin films

Authors: Jingzhong Xiao, Aiying Wu, Paula M. Vilarinho

Ref.: Appl. Phys. Lett. 92, 032902 (2008)

Abstract: Dielectric/ferroelectric properties of morphotropic phase boundary 0.37 Bi Sc O 3–0.63 Pb Ti O 3 thin films with a Pb Ti O 3 seed layer deposited on platinized silicon substrates by sol-gel are examined. Room temperature dielectric constant of ≫1600 and dielectric loss of 0.02 are achieved (100 Hz ) . A well-defined hysteresis loop was observed with a Pr of ∼23 μ C / cm 2 . In particular, the remarkable low Ec of ∼33 kV / cm of these films adds value to the potential application of Bi Sc O 3– Pb Ti O 3 films in high temperature ferroelectric memories. The influence of Pb Ti O 3 seed layer on the electric properties and the relation with the phase formation process, crystallinity, and microstructure of the films is discussed. Sol-gel derived morphotropic phase boundary 0.37BiScO3–0.63PbTiO3 thin films (PDF Download Available). Available from: https://www.researchgate.net/publication/224406345_Sol-gel_derived_morphotropic_phase_boundary_037BiScO3-063PbTiO3_thin_films [accessed Dec 22, 2015].

DOI: 10.1063/1.2834366