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Spectroscopic, diode-pumped laser properties and gamma irradiation effect on Yb, Er, Ho:GYSGG crystals

Authors: Jiakang Chen, Dunlu Sun, Jianqiao Luo, Jingzhong Xiao, Hongxiang Kang, Huili Zhang, Maojie Cheng, Qingli Zhang, and Shaotang Yin

Ref.: Optics Letters 38, 1218-1220 (2013)

Abstract: We demonstrate a diode end-pumped Yb, Er, Ho:Gd1.17Y1.83Sc2Ga3O12 (GYSGG) laser operated at 2.79 μm in continuous-wave mode. Spectral analysis shows that Yb3+ and Ho3+ act as sensitizer and deactivator ions, respectively. Pumping with a 967 nm laser diode produces the maximum output power of 411 mW, corresponding to optical–optical conversion and slope efficiencies of 11.6% and 13.1%, respectively. The minimum laser threshold is only 81 mW because of Ho3+ doping. The laser properties are only slightly influenced by 100 mrad gamma irradiation. The Yb, Er, Ho:GYSGG crystal possesses excellent radiation resistance and is a potential laser gain medium in radiant environments.

DOI: 10.1364/OL.38.001218