2014 | 2013 | 2012 | 2011 | 2010 | 2009 | 2008 | 2007 | 2006 | 2005 | 2004 | 2003 | 2002 | 2001 | 2000 | 1999 | 1998 | 1997 | 1996 | 1995 | 1994 | 1993 | 1992 | 1991 | 1990 | 1989 | 1988 | 1987 | 1986 | 1985 | 1984 | 1983 | 1982 | 1981 | 1980 | 1979 | 1978 | 1977 | 1976 | 1975 | 1974 | 1973 | 1972 | 1971 | 1970 | 1969 | 1968 | 1967 | 1966 | 1965 | 1964 | 1963 | 1962 | 1961 | 500 | 76 | 0
Delayed electron capture and Mu- formation in ZnSe
Authors: R.C. Vilão, J.M. Gil, A. Weidinger, H.V. Alberto, J. Piroto Duarte, B.F.O. Costa, N. Ayres de Campos, R. L. Lichti, K. H. Chow, S. P. Cottrell, and S. F. J. Cox
Ref.: Physica B 404, 888-891 (2009)
Abstract: We have investigated a single crystal of the wide bandgap II-VI semiconductor ZnSe. The sample was highly resistive due to heavy compensation of this n-type semiconductor. In low transverse fields, clear signs of conversion from a paramagnetic to a diamagnetic fraction are observed, at about 60 K. The data are interpreted as delayed electron capture by paramagnetic muonium, forming the negatively charged state Mu(-). The implications with respect to the electrical activity of muonium, and by analogy hydrogen, in this semiconductor are analyzed. (C) 2008 Elsevier B.V. All rights reserved.
